| PART |
Description |
Maker |
| NBSG14 |
2.5V/3.3VSiGe Differential 1:4 Clock/Data Driver with RSECL* Outputs(B>RSECL输出.5V/3.3VSiGe，差:4时钟/数据驱动
|
ON Semiconductor
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| AN26102A AN26102A-14 |
SiGe Linear Power Amplifier for 2.4 GHz Band Applications
SiGe Bi-CMOS Monolithic IC, WLCSP PKG Power Amplifi er
|
Panasonic Battery Group
|
| MAX9981 MAX9981EGX-T |
825MHz to 915MHz Dual SiGe High-Linearity Active Mixer
825MHz to 915MHz / Dual SiGe High-Linearity Active Mixer
825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC36
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| THN6501 THN6501E THN6501Z THN6501U THN6501S |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN6701B |
SiGe NPN Transistor
|
AUK corp
|
| THN6501F |
SiGe NPN Transistor
|
AUK corp
|
| THN6702F |
SiGe NPN Transistor
|
AUK corp
|
| UPD5753T7G-E1 UPD5753T7G-E1-A |
SiGe/CMOS Integrated Circuit
|
Renesas Electronics Corporation
|
| THN6701B |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| UPC8215TU |
SiGe LOW NOISE AMPLIFIER
|
NEC
|
